Maximising light in optoelectronic devices

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By SolarWriter (Own work) [CC BY-SA 3.0 (http://creativecommons.org/licenses/by-sa/3.0) or GFDL (http://www.gnu.org/copyleft/fdl.html)], via Wikimedia Commons
EU-funded scientists combined metallic nanostructures with semiconductor nanocrystals to significantly improve light trapping in solar cells and photodetector devices.
Colloidal quantum dots (CQDs) are at the centre of a new and rapidly 
evolving research field, with the promise for applications in efficient 
and cost effective solar cells. Used as the absorbing photovoltaic 
material, they have the advantage of having a band gap that can be tuned
 simply by changing the nanoparticle size. This allows them to easily 
absorb different parts of the solar spectrum.
However, the thickness of the CQD layer is restricted to retain 
efficient charge extraction. Thus, novel light-trapping schemes are 
required to improve light absorption and efficiency. Plasmonic metal 
nanostructures have the potential to further enhance light trapping in 
the ultra-thin absorbing CQD layers.
The EU-funded project 'Plasmonically enhanced colloidal quantum dot 
photodetectors and photovoltaics' (PECQDPV) studied the optical and 
electrical effects of embedding engineered photonic structures in simple
 photoconductor and photodiode  devices, fabricated from lead–sulphide 
(PbS) CQD films.
Using photoconductor test devices with  embedded arrays of random, 
self-assembled metal nanoparticles that strongly scatter light, 
scientists demonstrated a 2.4 increase in photocurrent at wavelengths 
around the exciton peaks of PbS quantum dots of a given size.
Furthermore, they studied the electrical effects of embedding other 
metal nanostructures in these devices. Depending on the metal, direct 
contact with nanoparticles led to photocurrent suppression or 
enhancement. These findings were important for designing plasmonic CQD 
optoelectronic devices.
Focus was also placed on exploring the physical mechanisms behind 
plasmonic enhancement. To this end, scientists performed full-field 
optical simulations and developed simple analytical models. In 
simulations with Ag nanoparticles, the angular distribution of the 
scattered light was found to be relatively narrow, thus reducing its 
overall light-trapping potential. Experimental studies showed that mode 
structure of the thin semiconductor film is fundamental in determining 
the amount of light trapping.
To increase the efficiency of light trapping beyond that provided by
 random structures, periodically arranged nanostructures were 
investigated. Scientists developed a conceptual model to provide simple 
design rules for optimal light trapping in thin films with 2D grating 
couplers.  The grating couplers were integrated into photodiodes as the 
Au back contact, and achieved photocurrent enhancements of up to a 
factor of 3 for thin diodes and 1.5 for thick diodes, relative to planar
 reference devices of similar thickness.
PECQDPV sought to enhance the absorption of CQD devices by 
incorporating plasmonic nanostructures. The findings enhance 
understanding of the challenges regarding choice of plasmonic material 
and methods that enhance light trapping in a CQD device of particular 
geometry.
published: 2015-03-20